Ambipolar transport has been observed in pentacene films grown on polyvinyl alcohol gatedielectric with hole and electron mobilities of 0.3 and 0.04 cm2
/V s, respectively. A simple device structure with Au as source-drain electrode can be used to operate a transistor in both p-channel and n-channel modes without employing low work function metal electrodes for ambipolar charge injection. Using ambipolar pentacene field-effect transistors, we construct a complementary like inverter with voltage inversion gain of 10. These inverters are able to operate both in first and third quadrants of the voltage output to voltage input characteristics which is a unique feature of employing ambipolar transistors
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